transistor(pnp) features ? high dc c urrent g ain ? complementary t o 2sd1819a a pplications ? general purpose amplification m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 45 v v ceo collector - emitter voltage - 45 v v ebo emitter - base voltage - 7 v i c collector current - 100 m a p c collector power dissipation 150 m w r ja thermal resistance fro m j u nction to a mbient 833 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltag e v (br) cbo i c = - 1 0 a , i e =0 - 45 v collector - emitter breakdown voltage v (br) c e o i c = - 2 ma, i b =0 - 45 v emitter - base breakdown voltage v (br)eb o i e = - 10 a , i c =0 - 7 v collector cut - off current i cbo v cb = - 20 v, i e =0 - 100 n a collector cut - off current i c e o v c e = - 10 v, i b =0 - 100 a emitter cut - off current i ebo v eb = - 5 v, i c =0 - 100 n a dc current gain h fe v ce = - 10 v, i c = - 2m a 160 460 collector - emitter saturation voltage v ce(sat) i c = - 100m a, i b = - 10 ma - 0.5 v transition frequency f t v ce = - 10 v,i e = 1 ma , f= 20 0 mhz 80 mhz collector output capacitance c ob v cb = - 10 v, i e =0, f=1mhz 2.7 pf classification of h fe rank q r s range 160 C 260 210 C 340 290 C 460 marking bq1 br1 bs1 s o t C 3 23 1. base 2. emitter 3. collector 1 date:2011/05 www.htsemi.com semiconductor jinyu 2sb1 21 8 a
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